1.9 0.95 0.95 1.0 2.4 1.3 0.4 2.9 sot-23 plastic -encapsulate transistors C945LT1 transistor? npn ? features power dissipation p cm : 0.2 w?t amb=25??? collector current i cm : 0.15 a collector-base voltage v (br)cbo : 60 v operating and storage junction temperature range t j ?t stg : -55?? to +150 electrical characteristics ? t amb =25?? unless otherwise specified ? parameter symbol test conditions min typ max unit collector - base breakdown voltage v (br) cbo i c = 1 m a ? i e =0 60 v collector - emitter break down voltage v (br) c e o i c = 0.1m a ? i b =0 50 v collector - emitter breakdown voltage v (br)eb o i c = 100 | a ? i b =0 5 v collector cut - off current i cbo v cb = 60 v , i e =0 0.1 | a collector cut - off current i ceo v cb =45 v , i e =0 0.1 | a emitter cut - off current i ebo v eb = 5 v , i c =0 0.1 | a h fe (1) v ce = 6 v, i c = 1m a 130 400 dc current gain h fe (2) v ce = 6 v, i c = 0.1m a 40 collector - emitter saturation voltage v ce (sat) i c = 100 ma , i b = 10m a 0.3 v base - emitter saturation voltage v be (sat) i c = 100 ma , i b = 10m a 1 v base - emitter voltage v bef i e = 310m a 1.4 v transition frequency f t v ce =6v, i c = 10ma f= 30mhz 150 mhz classification of h fe(1) rank l h range 130 - 200 200 - 400 marking cr unit : mm sot ?a 23 1. base 2. emitter 3 . collector
sot -23 p ackage outline dimensions symbol a a1 a2 b c d e e1 e e1 l l1 | min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 0 max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 8 min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 0 max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 8 dimensions in millimeters dimensions in inches 0.037tpy 0.022ref 0.950tpy 0.550ref d e1 a1 a2 a e l1 l b e1 c 0.2 e |
|
